TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Effect of 3 nm gate length scaling in junctionless double

Photo-generation Rate generated in the model.

Effect of 3 nm gate length scaling in junctionless double

Photo-generation Rate generated in the model.

Energy band alignment with SiO2 + HfO2 as gate dielectric material

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Schematic of the real-space representation of an electron device

I-V curves for Non-graded base SiGe HBT

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

SS and DIBL comparison of this work with reports in literature